The Effect of Forward Gate Bias Stress on the Noise...

IEEE Transactions on Device and Materials Reliability 2015 / 3 Vol. 15; Iss. 1

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Axelsson, Olle, Thorsell, Mattias, Andersson, Kristoffer, Rorsman, Niklas
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Volume:
15
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2014.2372474
Date:
March, 2015
File:
PDF, 1.32 MB
english, 2015
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