Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs
Trabelsi, Mohamed, Sghaier, Nabil, Bluet, Jean Marie, Yacoubi, Nour, Guillot, Gérard, Brylinski, C.Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1251
File:
PDF, 347 KB
english, 2006