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Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs
Chen, Jun, Sekiguchi, Takashi, Takase, Masami, Fukata, Naoki, Hasunuma, Ryu, Yamabe, Kikuo, Sato, Motoyuki, Yamada, Keisaku, Chikyo, ToyohiroVolume:
156-158
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.156-158.461
Date:
October, 2009
File:
PDF, 948 KB
english, 2009