Ga Vacancies as Compensating Centers in Homogeneously or...

Materials Science Forum 1997 Vol. 258-263

Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

Laine, T., Saarinen, Kimmo, Hautojärvi, Pekka J., Corbel, C.
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Volume:
258-263
Year:
1997
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.258-263.879
File:
PDF, 483 KB
1997
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