Computational Modeling for the Development of CVD SiC...

Materials Science Forum 2003 Vol. 433-436

Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes

Melnychuck, Galyna, Koshka, Yaroslav, Yingquan, S., Mazzola, Michael S., Pittman, C.U.
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Volume:
433-436
Year:
2003
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.433-436.177
File:
PDF, 585 KB
english, 2003
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