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Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates
Tanaka, Takeshi, Kaneda, Naoki, Mishima, Tomoyoshi, Kihara, Yuhei, Aoki, Toshichika, Shiojima, KenjiVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.041002
Date:
April, 2015
File:
PDF, 1.51 MB
english, 2015