A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC
Truschin, Yu.V., Yankov, R.A., Kharlamov, V.S., Kulikov, D.V., Tsigankov, D.N., Kreissig, U., Voelskow, M., Pezoldt, Jörg, Skorupa, WolfgangVolume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.757
File:
PDF, 352 KB
1998