Improved On-Current of 4H-SiC MOSFETs with a...

Materials Science Forum 2009 Vol. 615-617

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

Nanen, Yuichiro, Yoshioka, Hironori, Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu
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Volume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.615-617.753
File:
PDF, 337 KB
english, 2009
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