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Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
Kurimoto, Eiji, Hangyo, M., Harima, Hiroshi, Kisoda, K., Nishiguchi, Taro, Nishino, Shigehiro, Nakashima, Shinichi, Katsuno, Masakazu, Ohtani, NoboruVolume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.621
File:
PDF, 381 KB
english, 2004