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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
Kojima, Kazutoshi, Takahashi, Tetsuo, Ishida, Yuuki, Kuroda, Satoshi, Okumura, Hajime, Arai, KazuoVolume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.209
File:
PDF, 618 KB
english, 2004