A Comprehensive Study of Growth Techniques &...

MRS Proceedings 2008 / 1 Vol. 1068

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

Jamil, Mustafa, Donnelly, Joseph P, Lee, Se-Hoon, Shahrjerdi, Davood, Akyol, Tarik, Tutuc, Emanuel, Banerjee, Sanjay K
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Volume:
1068
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1068-C07-03
Date:
January, 2008
File:
PDF, 433 KB
english, 2008
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