Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
Sugishita, S., Shoji, A., Mukai, Yoshihiko, Nishiguchi, Taro, Michikami, K., Isshiki, Toshiyuki, Ohshima, Satoru, Nishino, ShigehiroVolume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.177
File:
PDF, 849 KB
english, 2005