P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
Sarov, G., Cholakova, T., Kakanakov, RoumenVolume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.1005
File:
PDF, 191 KB
english, 2004