Characteristics of a Pd–oxide–In0.49Ga0.51P high electron...

Sensors and Actuators B: Chemical 2006 Vol. 113; Iss. 1

Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor

Chin-Chuan Cheng, Yan-Ying Tsai, Kun-Wei Lin, Huey-Ing Chen, Wei-Hsi Hsu, Ching-Wen Hong, Wen-Chau Liu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
113
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.snb.2005.02.019
File:
PDF, 291 KB
english, 2006
Conversion to is in progress
Conversion to is failed