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Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2
Sugawara, Takuya, Sreenivasan, Raghavasimhan, Oshima, Yasuhiro, McIntyre, Paul C.Volume:
996
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0996-H04-02
Date:
January, 2007
File:
PDF, 372 KB
english, 2007