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Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage
A. Bengoechea Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M.A. Sánchez-GarcíaVolume:
142
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.snb.2009.07.016
File:
PDF, 461 KB
english, 2009