SiGe epitaxially grown in nano-trenches on Si substrate
Richard, O, Vincent, B, Favia, P, Lagrain, P, Bender, HVolume:
471
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/471/1/012028
Date:
November, 2013
File:
PDF, 1.65 MB
english, 2013