Lateral 4H-SiC MOSFETs with Low On-Resistance by Using...

Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure

Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu
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Volume:
556-557
Year:
2007
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.556-557.815
File:
PDF, 297 KB
english, 2007
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