Growth of SiC Layers on (111) Si by Solid Source Molecular...

Materials Science Forum 1998 Vol. 264-268

Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy

Pezoldt, Jörg, Stauden, Thomas, Cimalla, Volker, Ecke, Gernot, Romanus, Henry, Eichhorn, G.
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Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.251
File:
PDF, 371 KB
1998
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