Improved Stability of 4H-SiC MOS Device Properties by...

Materials Science Forum 2013 / 1 Vol. 740-742

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

Yano, Hiroshi, Araoka, Tsuyoshi, Hatayama, Tomoaki, Fuyuki, Takashi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.727
Date:
January, 2013
File:
PDF, 425 KB
english, 2013
Conversion to is in progress
Conversion to is failed