Demonstration of High Quality 4H-SiC Epitaxy by Using the...

Materials Science Forum 2014 / 2 Vol. 778-780

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

Mitani, Yoichiro, Tomita, Nobuyuki, Hamano, Kenichi, Tarutani, Masayoshi, Tanaka, Takanori, Ohno, Akihito, Kuroiwa, Takeharu, Toyoda, Yoshihiko, Imaizumi, Masayuki, Sumitani, Hiroaki, Yamakawa, Satosh
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.167
Date:
February, 2014
File:
PDF, 1.49 MB
english, 2014
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