Crystallinity Evaluation of 4H-SiC Single Crystal Grown by...

Materials Science Forum 2012 / 5 Vol. 717-720

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

Kamei, Kazuhito, Kusunoki, Kazuhiko, Yashiro, Nobuyuki, Okada, Nobuhiro, Moriguchi, Koji, Daikoku, H., Kado, M., Suzuki, H., Sakamoto, H., Bessho, T.
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.45
Date:
May, 2012
File:
PDF, 631 KB
english, 2012
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