Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD
Li, Nola, Wang, Shen-Jie, Fenwick, William E., Melton, Andrew, Huang, Chung-Lung, Feng, Zhe Chuan, Summers, Christopher, Jamil, Muhammad, Ferguson, IanVolume:
1201
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1201-H06-02
Date:
January, 2009
File:
PDF, 224 KB
english, 2009