Degradation in SiC Bipolar Devices: Sources and...

Materials Science Forum 2003 Vol. 433-436

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

Lendenmann, H., Bergman, J. Peder, Dahlquist, Fanny, Hallin, Christer
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Volume:
433-436
Year:
2003
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.433-436.901
File:
PDF, 1.37 MB
english, 2003
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