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High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes
Levinshtein, Michael E., Ivanov, Pavel A., Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Das, Mrinal K., Hull, Brett A.Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1339
File:
PDF, 492 KB
english, 2006