Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A...

Journal of The Electrochemical Society 2012 Vol. 159; Iss. 5

Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A Resistive Switching Phenomenon

Rodriguez, R., Martin-Martinez, J., Crespo-Yepes, A., Porti, M., Nafria, M., Aymerich, X.
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Volume:
159
Year:
2012
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/2.012206jes
File:
PDF, 447 KB
english, 2012
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