Comparison of Nitrogen and Phosphorus Implanted, Planar,...

Materials Science Forum 2000 Vol. 338-342

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

Chatty, K., Khemka, V., Chow, T.P., Gutmann, Ronald J.
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Volume:
338-342
Year:
2000
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1331
File:
PDF, 357 KB
2000
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