First-Principles study of HfO2/:GaAs interface passivation...

MRS Proceedings 2009 / 1 Vol. 1155

First-Principles study of HfO2/:GaAs interface passivation by Si and Ge

Wang, Weichao, Xiong, Ka, Lee, Geunsik, Huang, Min, Wallace, Robery M., Cho, Kyeongjae
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Volume:
1155
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1155-C09-15
Date:
January, 2009
File:
PDF, 321 KB
english, 2009
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