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Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Blanqué, Servane, Pérez, R., Godignon, Phillippe, Mestres, Narcis, Morvan, Erwan, Kerlain, Alexandre, Dua, Christian, Brylinski, C., Zielinski, Marcin, Camassel, JeanVolume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.893
File:
PDF, 566 KB
english, 2004