Raman and Rutherford Backscattering Characterization of...

MRS Proceedings 2009 / 1 Vol. 1210

Raman and Rutherford Backscattering Characterization of Ti-implanted Si above the Mott Limit

Olea Ariza, Javier, Pastor, David, Mártil, Ignacio, González-Díaz, Germán, Ibáñez, Jordi, Cuscó, Ramón, Artús, Luis
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Volume:
1210
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1210-Q04-10
Date:
January, 2009
File:
PDF, 262 KB
english, 2009
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