About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le Louarn, S. Vézian, J. MassiesVolume:
36
Year:
2004
Language:
english
Pages:
16
DOI:
10.1016/j.spmi.2004.09.024
File:
PDF, 344 KB
english, 2004