Characterisation of defects in rare earth implanted GaN by...

Superlattices and Microstructures 2004 Vol. 36; Iss. 4-6

Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy

A. Colder, P. Marie, T. Wojtowicz, P. Ruterana, S. Eimer, L. Méchin, K. Lorenz, U. Wahl, E. Alves, V. Matias, M. Mamor
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Volume:
36
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.spmi.2004.09.027
File:
PDF, 755 KB
english, 2004
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