Comparisons between InGaP/GaAs heterojunction bipolar...

Superlattices and Microstructures 2005 Vol. 37; Iss. 6

Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Shih-Wei Tan, Hon-Ren Chen, Min-Yuan Chu, Wei-Tien Chen, An-Hung Lin, Meng-Kai Hsu, Tien-Sheng Lin, Wen-Shiung Lour
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Volume:
37
Year:
2005
Language:
english
Pages:
9
DOI:
10.1016/j.spmi.2005.02.002
File:
PDF, 728 KB
english, 2005
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