![](/img/cover-not-exists.png)
Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. MoriceauVolume:
40
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.spmi.2006.06.006
File:
PDF, 361 KB
english, 2006