Growth by molecular beam epitaxy of AlGaN/GaN high electron...

Superlattices and Microstructures 2006 Vol. 40; Iss. 4-6

Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
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Volume:
40
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.spmi.2006.06.006
File:
PDF, 361 KB
english, 2006
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