Influence of emitter-ledge thickness on the surface-...

Superlattices and Microstructures 2008 Vol. 43; Iss. 4

Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

Kuei-Yi Chu, Shiou-Ying Cheng, Tzu-Pin Chen, Ching-Wen Hung, Li-Yang Chen, Tsung-Han Tsai, Wen-Chau Liu, Lu-An Chen
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Volume:
43
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.spmi.2008.01.018
File:
PDF, 507 KB
english, 2008
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