A high mobility ambipolar field effect transistor using a...

Solid State Communications 2008 Vol. 145; Iss. 3

A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

Shohei Kinoshita, Tomo Sakanoue, Masayuki Yahiro, Kazuo Takimiya, Hideaki Ebata, Masaaki Ikeda, Hirokazu Kuwabara, Chihaya Adachi
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Volume:
145
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.ssc.2007.10.017
File:
PDF, 548 KB
english, 2008
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