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3.6 kV 4H-SiC JBS Diodes with Low RonS
Sugawara, Yoshitaka, Asano, Katsunori, Saito, RyuichiVolume:
338-342
Year:
2000
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1183
File:
PDF, 278 KB
2000