Comparison of electrical characteristics of back- and...

Solid State Communications 2008 Vol. 148; Iss. 7-8

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Jeongmin Kang, Donghyuk Yeom, Dong-Young Jeong, Sangsig Kim
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
148
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.ssc.2008.09.011
File:
PDF, 1.28 MB
english, 2008
Conversion to is in progress
Conversion to is failed