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Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1−xSix/Si(100) materials using nanoscale building blocks
Y.-Y. Fang, V.R. D’Costa, J. Tolle, J.B. Tice, C.D. Poweleit, J. Menéndez, J. KouvetakisVolume:
149
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.ssc.2008.10.009
File:
PDF, 1.37 MB
english, 2009