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X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds
Raghothamachar, Balaji, Dudley, Michael, Wang, Buguo, Callahan, Michael, Bliss, David, Konkapaka, Phanikumar, Wu, Huaqiang, Spencer, MichaelVolume:
831
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-831-E8.23
Date:
January, 2004
File:
PDF, 4.28 MB
english, 2004