Growth and characterization of semi-polar (11-22) GaN with...

MRS Proceedings 2006 / 1 Vol. 955

Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers

Hollander, Jonathan, McAleese, Clifford, Kappers, Menno, Humphreys, Colin
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Volume:
955
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0955-I04-05
Date:
January, 2006
File:
PDF, 846 KB
english, 2006
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