Epitaxy of High Quality SiC Layers by CST

Materials Science Forum 1998 Vol. 264-268

Epitaxy of High Quality SiC Layers by CST

Yoshida, Takeru, Nishio, Y., Lilov, S.K., Nishino, Shigehiro
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Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.155
File:
PDF, 395 KB
1998
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