Statistical SRAM Read Access Yield Improvement Using...

IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2013 / 01 Vol. 21; Iss. 1

Statistical SRAM Read Access Yield Improvement Using Negative Capacitance Circuits

Mostafa, Hassan, Anis, Mohab, Elmasry, Mohamed
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Volume:
21
Language:
english
Journal:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
DOI:
10.1109/TVLSI.2011.2178046
Date:
January, 2013
File:
PDF, 1.38 MB
english, 2013
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