A Weibull distribution-based new approach to represent hot...

Solid-State Electronics 2004 Vol. 48; Iss. 2

A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

Ayten Kuntman, Arda Ardalı, Hakan Kuntman, Firat Kaçar
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Volume:
48
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2003.07.001
File:
PDF, 298 KB
english, 2004
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