Towards the limits of conventional MOSFETs: case of sub 30...

Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices

G. Bertrand, S. Deleonibus, B. Previtali, G. Guegan, X. Jehl, M. Sanquer, F. Balestra
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Volume:
48
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2003.09.026
File:
PDF, 351 KB
english, 2004
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