An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Bogdan Govoreanu, Pieter Blomme, Kirklen Henson, Jan Van Houdt, Kristin De MeyerVolume:
48
Year:
2004
Language:
english
Pages:
9
DOI:
10.1016/j.sse.2003.09.031
File:
PDF, 780 KB
english, 2004