An effective model for analysing tunneling gate leakage...

An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers

Bogdan Govoreanu, Pieter Blomme, Kirklen Henson, Jan Van Houdt, Kristin De Meyer
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Volume:
48
Year:
2004
Language:
english
Pages:
9
DOI:
10.1016/j.sse.2003.09.031
File:
PDF, 780 KB
english, 2004
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