Effects of a trench under the gate in high voltage RESURF...

Solid-State Electronics 2004 Vol. 48; Iss. 9

Effects of a trench under the gate in high voltage RESURF LDMOSFET for SOI power integrated circuits

Won-So Son, Young-Ho Sohn, Sie-Young Choi
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Volume:
48
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2004.02.023
File:
PDF, 750 KB
english, 2004
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