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Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures
V.A. StuchinskyVolume:
48
Year:
2004
Language:
english
Pages:
9
DOI:
10.1016/j.sse.2004.03.023
File:
PDF, 348 KB
english, 2004