Characterization of moving bits (MBs) and QBD in wet/dry...

Solid-State Electronics 2004 Vol. 48; Iss. 10-11

Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications

Jan Ackaert, Antony Lowe, Sylvie Boonen, Thierry Yao, Joseph Rayhem, Bart Desoete, Jagdish Prasad, Mike Thomason, Jan Van Houdt, Robin Degraeve, Luc Haspeslagh, Paul Hendrickx
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
48
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2004.05.035
File:
PDF, 434 KB
english, 2004
Conversion to is in progress
Conversion to is failed