AlGaN/GaN field effect transistors with C-doped GaN buffer...

Solid-State Electronics 2005 Vol. 49; Iss. 5

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

S. Haffouz, H. Tang, J.A. Bardwell, E.M. Hsu, J.B. Webb, S. Rolfe
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Volume:
49
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2005.01.012
File:
PDF, 308 KB
english, 2005
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